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HAT2035R
Silicon N Channel Power MOS FET High Speed Power Switching
REJ03G1242-0100 Rev.1.00 Jun. 09, 2005
Features
* * * * Low on-resistance Capable of 4 V gate drive Low drive current High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8)
7 65 2 G 4 G
78 DD
56 DD
8
1
4 23
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
S3
S1
MOS1
MOS2
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Channel dissipation Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2
Note3
Ratings 150 15 0.5 2 0.5 1
Unit V V A A A W W C C
Channel dissipation Pch 1.5 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 Notes: 1. PW 10 s, duty cycle 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
Rev.1.00 Jun. 09, 2005, page 1 of 3
HAT2035R
Electrical Characteristics
(Ta = 25C)
Item Symbol V(BR)DSS Drain to Source breakdown voltage Gate to Source breakdown voltage V(BR)GSS Gate to Source leak current IGSS Zero Gate voltage Drain current IDSS Gate to Source cutoff voltage VGS(off) RDS(on) Static Drain to Source on state resistance RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-Drain diode forward voltage Body-Drain diode reverse recovery time Notes: 4. Pulse test RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 150 15 -- -- 1.0 -- -- -- 0.56 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 1.6 1.9 2.4 0.86 95 42 11 9 16 18 14 0.9 90 Max -- -- 10 5 2.1 2.2 2.7 5.5 -- -- -- -- -- -- -- -- 1.4 -- Unit V V A A V S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 12 V, VDS = 0 VDS = 150 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 0.5 A, VGS = 10 VNote4 ID = 0.5 A, VGS = 4 V Note4 ID = 2 A, VGS = 5 V Note4 ID = 0.5 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VGS = 5 V, ID = 0.5 A, VDD 30 V
IF = 0.5 A, VGS = 0 Note4 IF = 0.5 A, VGS = 0 diF/ dt = 50 A/s
Rev.1.00 Jun. 09, 2005, page 2 of 3
HAT2035R
Package Dimensions
JEITA Package Code P-SOP8-3.95 x 4.9-1.27 RENESAS Code PRSP0008DD-D Package Name FP-8DAV MASS[Typ.] 0.085g
*1 D
F
8
5
*2 E HE
bp
Index mark
1
Z e
4
*3 bp xM
c
Terminal cross section (Ni/Pd/Au plating)
NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
Reference Symbol
Dimension in Millimeters Min Nom 4.90 3.95 Max 5.3
L1
D E A2 A1 A 0.10
0.14
0.25 1.75
A
bp b1
0.34
0.40
0.46
A1
c
0.15
0.20
0.25
L
c1 0 HE 5.80 6.10 1.27 0.25 0.1 0.75 0.40 0.60 1.08 1.27 8 6.20
y
Detail F
e x y Z L L1
Ordering Information
Part Name HAT2035R-EL-E Quantity 2500 pcs. Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.1.00 Jun. 09, 2005, page 3 of 3
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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